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Author Kobayashi, Kiyoteru ♦ Teramoto, Akinobu ♦ Hirayama, Makoto
Sponsorship USDOE
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword MATERIALS SCIENCE ♦ SILICON NITRIDES ♦ ELECTRIC CONDUCTIVITY ♦ THIN FILMS ♦ ELECTRON TRANSFER ♦ DIELECTRIC MATERIALS ♦ CAPACITORS ♦ SAMPLE PREPARATION
Abstract The conduction current in silicon nitride increases even at constant electric field as the nitride thickness is reduced to less than 5 nm in oxide equivalent thickness (t{sub eq}). In order to analyze the charge transport in the ultra thin nitrides less than 5 nm t{sub eq}, the authors measured the thickness and temperature dependence of conduction current through nitrides of 3.4 to 10.2 nm t{sub eq}, in the temperature range from 77 to 398 K. Current increase was observed in both the tunnel emission component, which is thickness dependent, and in the temperature-dependent component. The temperature-dependent current component was dominant at high temperatures and low fields in the ultra thin nitride. The method of separating the electron and hole currents was used for both n and p-channel metal-nitride-silicon transistors, to study the charge transport in nitrides from 3.8 to 8.6 nm t{sub eq}, at 296 and 398 K. The increase in the number of electrons injected into the nitride was larger than the increase in the number of holes injected into the nitride when the nitride thickness was reduced. The increase in electron current flowing out of the nitride was also large compared with the increase in hole current flowing out of the nitride. The authors claim that the contribution of electrons to the total charge transport is increased with the reduction in nitride thickness. Finally, they discussed the dependence of the breakdown field on nitride thickness in oxide/nitride/oxide structures. They claim that top and bottom oxides should be as thin as possible to obtain the high breakdown field.
ISSN 00134651
Educational Use Research
Learning Resource Type Article
Publisher Date 1995-03-01
Publisher Place United States
Journal Journal of the Electrochemical Society
Volume Number 142
Issue Number 3


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