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Author Sa, M. ♦ Annen, A. ♦ Jacob, W.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword MATERIALS SCIENCE ♦ BORON ♦ CHEMICAL VAPOR DEPOSITION ♦ HYDROGEN ♦ THIN FILMS ♦ AMORPHOUS STATE ♦ HYDROGEN ADDITIONS ♦ CHEMICAL BONDS ♦ PLASMA ♦ INFRARED SPECTRA ♦ ABSORPTION SPECTRA
Abstract Hydrogenated amorphous boron (a-B:H) thin films were prepared by radio-frequency plasma deposition using B{sub 2}H{sub 6} (10{percent}) in H{sub 2} as precursor gas. The influence of the substrate temperature and self-bias on the a-B:H film structure was investigated. The boron and hydrogen atom densities were determined by ion-beam analysis. The film structure, especially the bonding of hydrogen to boron, was investigated by Fourier transform infrared (FTIR) spectroscopy. The FTIR data were quantified by using a new formalism which allows a proper calculation of the extinction coefficient from the FTIR spectra. The intensities of the different boron-hydrogen absorption bands were compared with the ion-beam analyzed hydrogen atom densities to determine the absorption strength of the B{endash}H terminal and B{endash}H{endash}B bridge bonds. A non-negligible fraction of hydrogen is shown to be bonded to boron in a B{endash}H{endash}B bridge bond. {copyright} {ital 1997 American Institute of Physics.}
ISSN 00218979
Educational Use Research
Learning Resource Type Article
Publisher Date 1997-08-01
Publisher Place United States
Journal Journal of Applied Physics
Volume Number 82
Issue Number 4


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