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Author Carter, S. A. ♦ Rosenbaum, T. F. ♦ Lu, M. ♦ Jaeger, H. M. ♦ Metcalf, P. ♦ Honig, J. M. ♦ Spalek, J.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword MATERIALS SCIENCE ♦ VANADIUM OXIDES ♦ MAGNETIC SUSCEPTIBILITY ♦ ANTIFERROMAGNETISM ♦ ELECTRIC CONDUCTIVITY ♦ HIGH PRESSURE ♦ LOW PRESSURE ♦ MEDIUM PRESSURE ♦ PHASE DIAGRAMS ♦ PRESSURE DEPENDENCE ♦ SPIN ♦ TEMPERATURE DEPENDENCE ♦ TEMPERATURE RANGE 0000-0013 K ♦ TEMPERATURE RANGE 0013-0065 K ♦ TEMPERATURE RANGE 0065-0273 K ♦ TEMPERATURE RANGE 0273-0400 K ♦ TITANIUM ADDITIONS ♦ ALLOYS ♦ ANGULAR MOMENTUM ♦ CHALCOGENIDES ♦ DIAGRAMS ♦ ELECTRICAL PROPERTIES ♦ MAGNETIC PROPERTIES ♦ MAGNETISM ♦ OXIDES ♦ OXYGEN COMPOUNDS ♦ PARTICLE PROPERTIES ♦ PHYSICAL PROPERTIES ♦ TEMPERATURE RANGE ♦ TITANIUM ALLOYS ♦ TRANSITION ELEMENT COMPOUNDS ♦ VANADIUM COMPOUNDS ♦ Ceramics, Cermets, & Refractories- Physical Properties
Abstract We report a systematic study of the resistivity and magnetic susceptibility of pure V[sub 2]O[sub 3], the original Mott-Hubbard system at half filling, for pressures 0[le][ital P][le]25 kbar and temperatures 0.35[le][ital T][le]300 K. We also study (V[sub 0.99]Ti[sub 0.01])[sub 2]O[sub 3] under pressure in order to elucidate the role of disorder on a metal-insulator transition in the highly correlated limit. Despite the low level of doping, we find that the two systems are very different. We observe a conventional collapsing of the Mott-Hubbard gap only for stoichiometric V[sub 2]O[sub 3]; the Ti disorder stabilizes the long-range antiferromagnetic order and a magnetic Slater gap. Moreover, we discover different [ital P]-[ital T] phase diagrams for the two systems, with a decoupling of the charge and spin degrees of freedom at the approach to the [ital T]=0, pressure-driven metal-insulator transition in pure V[sub 2]O[sub 3].
ISSN 01631829
Educational Use Research
Learning Resource Type Article
Publisher Date 1994-03-15
Publisher Place United States
Journal Physical Review, B: Condensed Matter
Volume Number 49
Issue Number 12


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