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Author Miller, D. J. ♦ Kim, H. K. ♦ Roberts, T. ♦ Kampwirth, R. T. ♦ Gray, K. E. ♦ Zheng, J. Q. ♦ Williams, S. ♦ Chang, R. P. H. ♦ Ketterson, J. B.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword MATERIALS SCIENCE ♦ COPPER OXIDES ♦ DEPOSITION ♦ CHEMICAL COMPOSITION ♦ IN-SITU PROCESSING ♦ PARTIAL PRESSURE ♦ PHASE STUDIES ♦ PHASE TRANSFORMATIONS ♦ PRESSURE DEPENDENCE ♦ SPUTTERING ♦ TEMPERATURE DEPENDENCE ♦ X-RAY DIFFRACTION ♦ CHALCOGENIDES ♦ COHERENT SCATTERING ♦ COPPER COMPOUNDS ♦ DIFFRACTION ♦ OXIDES ♦ OXYGEN COMPOUNDS ♦ PROCESSING ♦ SCATTERING ♦ TRANSITION ELEMENT COMPOUNDS ♦ Ceramics, Cermets, & Refractories- Preparation & Fabrication
Abstract The conditions for deposition of Cu and Cu-oxide thin films by reactive dc sputtering have been investigated by characterizing the crystal structure of growing films both {ital during} and immediately following deposition using an {ital in} {ital situ} x-ray diffraction technique. The relationship between sputtering conditions and the phases deposited was established for a variety of conditions. At each temperature studied, increasing the oxygen pressure in the system resulted in a systematic change in the phases deposited. Of significant importance was the identification of temperature-pressure regimes in which CuO was stable during deposition but reverted to Cu{sub 2}O after the sputtering plasma was extinguished, suggesting a shift in the oxidizing potential in the plasma environment. These results also suggest that the {ital in} {ital situ} analysis technique may be ideally suited for the investigation of phase relationships and phase diagrams in other systems.
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 1991-12-09
Publisher Place United States
Journal Applied Physics Letters
Volume Number 59
Issue Number 24
Organization Argonne National Laboratory (ANL), Argonne, IL


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