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Author Aslamazov, L. G.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ♦ SUPERCONDUCTING JUNCTIONS ♦ CRITICAL CURRENT ♦ DOPED MATERIALS ♦ FLUCTUATIONS ♦ SEMICONDUCTOR MATERIALS ♦ TEMPERATURE DEPENDENCE ♦ CURRENTS ♦ ELECTRIC CURRENTS ♦ JUNCTIONS ♦ MATERIALS ♦ VARIATIONS 656102* -- Solid State Physics-- Superconductivity-- Acoustic, Electronic, Magnetic, Optical, & Thermal Phenomena-- (-1987)
Abstract The temperature dependence of the critical current of superconductor--semiconductor--superconductor junctions is investigated at various densities of the semiconductor doping impurities. The tunnel resistance of the junction is determined in the nondegenerate case and it is shown that this temperature dependence is the same as for an ordinary tunnel element. If the semiconductor is degenerate, the critical current first increases exponentially with decreasing temperature, and then quadratically (at a large electron mean free path) or logarithmically (in the dirty case). In the intermediate impurity-density region the temperature dependence of the critical current is determined by the fluctuations of the bottom of the conduction band in the semiconductor.
Educational Use Research
Learning Resource Type Article
Publisher Date 1981-07-01
Publisher Place United States
Journal Sov. Phys. - JETP
Volume Number 54
Issue Number 1
Organization Moscow Institute of Steel and Alloys


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