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Author Kuo, Yen-Kuang ♦ Chen, Fang-Ming ♦ Chang, Jih-Yuan ♦ Shih, Ya-Hsuan
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ♦ AUGER ELECTRON SPECTROSCOPY ♦ CHANNELING ♦ COMPUTERIZED SIMULATION ♦ ELECTRONS ♦ HALL EFFECT ♦ INJECTION ♦ LIGHT EMITTING DIODES ♦ OPTIMIZATION ♦ POLARIZATION ♦ RECOMBINATION ♦ STARK EFFECT ♦ SUPERLATTICES ♦ ULTRAVIOLET RADIATION ♦ WELLS
Abstract The characteristics of the near-ultraviolet (NUV) light-emitting diodes (LEDs) with wide (14-nm-thick) and narrow (2-nm-thick) wells under the situations of different numbers of wells and degree of polarization are systematically investigated. The simulation results show that the Auger recombination can be efficiently suppressed with the increase of number of wells in NUV LEDs. For the LEDs with wide wells, the quantum-confined Stark effect and Shockley–Read–Hall recombination play an important role when the number of wells increases, especially when the LED is under low current injection or high degree of polarization. In order to take the advantage of using wide wells, it is proposed that the quaternary Al{sub 0.1}In{sub 0.05}Ga{sub 0.85}N barriers be used in wide-well NUV LEDs along with the use of Al{sub 0.3}Ga{sub 0.7}N/Al{sub 0.1}Ga{sub 0.9}N superlattice electron-blocking layer to mitigate the polarization effect and electron overflow. With this band-engineering structural design, the optical performance of the wide-well NUV LEDs is much better than its thin-well counterpart even under the situation of high degree of polarization.
ISSN 00218979
Educational Use Research
Learning Resource Type Article
Publisher Date 2016-03-07
Publisher Place United States
Journal Journal of Applied Physics
Volume Number 119
Issue Number 9


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