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Author Samedov, V. V.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY ♦ CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ♦ AMPLITUDES ♦ CARRIER MOBILITY ♦ DENSITY ♦ ELECTRIC POTENTIAL ♦ ELECTRON TRANSFER ♦ ELECTRONS ♦ ENERGY RESOLUTION ♦ FANO FACTOR ♦ GAIN ♦ NOISE ♦ SEMICONDUCTOR DETECTORS ♦ SEMICONDUCTOR MATERIALS ♦ SERIES EXPANSION ♦ SIGNALS
Abstract It is shown that the series expansion of the amplitude and variance of the hemispherical semiconductor detector signal in inverse bias voltage allows finding the Fano factor, the product of electron lifetime and mobility, the degree of inhomogeneity of the trap density in the semiconductor material, and the relative variance of the electronic channel gain. An important advantage of the proposed method is that it is independent of the electronic channel gain and noise.
ISSN 10637788
Educational Use Research
Learning Resource Type Article
Publisher Date 2017-12-15
Publisher Place United States
Journal Physics of Atomic Nuclei
Volume Number 80
Issue Number 11


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