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Author Blavette, D. ♦ Duguay, S.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ♦ ATOMS ♦ DEFECTS ♦ DISLOCATIONS ♦ DISTRIBUTION ♦ DOPED MATERIALS ♦ GRAIN BOUNDARIES ♦ SEGREGATION ♦ SEMICONDUCTOR MATERIALS ♦ SILICON ♦ THREE-DIMENSIONAL CALCULATIONS ♦ TOMOGRAPHY
Abstract The role of atom probe tomography in the investigation of clustering and segregation of dopants to lattice defects in semiconductors is highlighted on the basis of some selected salient illustrations obtained at the Groupe de Physique des Matériaux of Rouen (France). The instrument is shown to be able to map out the 3D distribution of chemical species in the three dimensions of space at the ultimate scale. Results related to clustering, segregation of dopants (As, B, and P) to grain boundaries, dislocation loops, and extended defects in silicon are discussed.
ISSN 00218979
Educational Use Research
Learning Resource Type Article
Publisher Date 2016-05-14
Publisher Place United States
Journal Journal of Applied Physics
Volume Number 119
Issue Number 18


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