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Author Angeletos, T. ♦ Sgourou, E. N. ♦ Andrianakis, A. ♦ Diamantopoulou, A. ♦ Londos, C. A. ♦ Chroneos, A.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ ACTIVATION ENERGY ♦ ANNEALING ♦ ATOMS ♦ CARBON ♦ DOPED MATERIALS ♦ REACTION KINETICS ♦ SILICON ♦ SPECTROSCOPY ♦ STRAINS ♦ TIN
Abstract Localized vibrational mode spectroscopy measurements on Czochralski silicon (Cz-Si) samples subjected to isothermal annealing at 450 °C are reported. First, we studied the effect of carbon (C) and tin (Sn) isovalent dopants on the aggregation kinetics of oxygen. It is determined that the reduction rate of oxygen is described by the Johnson-Mehl-Avrami equation in accordance with previous reports. The activation energy related with the reaction rate constant of the process is calculated to increase from Cz-Si, to C-doped Cz-Si (CCz-Si), to Sn-doped Cz-Si contained C (SnCz-Si). This is attributed to the presence of the isovalent dopants that may impact both the kinetics of the oxygen atoms and also may lead to the formation of other oxygen-related clusters. Second, we studied the effect of Sn on the formation and evolution of carbon-oxygen (C-O) defects. It was determined that the presence of Sn suppresses the formation of the C-O defects as indicated by the reduction in the strength of the 683, 626, and 586 cm{sup −1} well-known bands of C{sub s}O{sub i} defect. The phenomenon is attributed to the association of Sn with C atoms that may prevent the pairing of O with C. Third, we investigated the effect of C and Sn on the formation of thermal donors (TDs). Regarding carbon our results verified previous reports that carbon suppresses the formation of TDs. Interestingly, when both C and Sn are present in Si, very weak bands of TDs were observed, although it is known that Sn alone suppress their formation. This may be attributed to the competing strains of C and Sn in the Si lattice.
ISSN 00218979
Educational Use Research
Learning Resource Type Article
Publisher Date 2015-07-07
Publisher Place United States
Journal Journal of Applied Physics
Volume Number 118
Issue Number 1


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