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Author Berkowitz, S. J. ♦ Zhang, Y. M. ♦ Mallison, W. H. ♦ Char, K. ♦ Terzioglu, E. ♦ Beasley, M. R.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword PHYSICS ♦ SUPERCONDUCTING DEVICES ♦ TRANSISTORS ♦ JOSEPHSON JUNCTIONS ♦ HIGH-TC SUPERCONDUCTORS ♦ FLUX QUANTIZATION ♦ YTTRIUM OXIDES ♦ BARIUM OXIDES ♦ COPPER OXIDES ♦ COBALT ADDITIONS ♦ FLUXONS
Abstract We have realized the Josephson fluxon{endash}antifluxon transistor (JFAT) in high temperature superconductivity using an asymmetric control line on top of either bicrystal junctions or Co-doped YBa{sub 2}Cu{sub 3}O{sub {ital x}} superconductor{endash}normal{endash}superconductor (SNS) junctions. We have measured current gains as high as 6 for 30 {mu}m-wide bicrystal JFATs (30 K) and as high as 3 for Co-doped SNS JFATs (50 K). An improvement in gain over the Josephson vortex flow transistor, due to improved coupling efficiency, is demonstrated. There is also a reduction of control line inductance that should lead to an improvement in gate speed. {copyright} {ital 1996 American Institute of Physics.}
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 1996-11-01
Publisher Place United States
Journal Applied Physics Letters
Volume Number 69
Issue Number 21


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