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Author Barman, A. ♦ Saini, C. P. ♦ Ghosh, S. K. ♦ Dhar, S. ♦ Kanjilal, A. ♦ Sarkar, P. K. ♦ Roy, A. ♦ Satpati, B. ♦ Kanjilal, D.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ ARGON IONS ♦ ELECTRON DENSITY ♦ IRRADIATION ♦ MEMORY DEVICES ♦ OXYGEN ♦ PERFORMANCE ♦ PROBES ♦ REFLECTIVITY ♦ SURFACES ♦ TITANIUM OXIDES ♦ TRANSMISSION ELECTRON MICROSCOPY ♦ VACANCIES ♦ X-RAY SPECTROSCOPY
Abstract The variation of electron density in TiO{sub 2−x} nanochannels, exhibiting resistive switching phenomenon, produced by Ar{sup +} ion-irradiation at the threshold fluence of 5 × 10{sup 16} ions/cm{sup 2} is demonstrated by X-ray reflectivity (XRR). The transmission electron microscopy reveals the formation of nanochannels, while the energy dispersive X-ray spectroscopy confirms Ti enrichment near the surface due to ion-irradiation, in consistent with the increase in electron density by XRR measurements. Such a variation in Ti concentration indicates the evolution of oxygen vacancies (OVs) along the TiO{sub 2−x} nanochannels, and thus paves the way to explain the operation and performance of the Pt/TiO{sub 2−x}/Pt-based memory devices via OV migration.
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 2016-06-13
Publisher Place United States
Journal Applied Physics Letters
Volume Number 108
Issue Number 24


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