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Author Biswas, Kalyan ♦ Sarkar, Angsuman ♦ Sarkar, Chandan Kumar
Source ACM Digital Library
Content type Text
Publisher Association for Computing Machinery (ACM)
File Format PDF
Copyright Year ©2016
Language English
Subject Domain (in DDC) Computer science, information & general works ♦ Data processing & computer science
Subject Keyword FinFET ♦ Analog/RF performance ♦ Cutoff frequency ♦ Fin width ♦ High-k ♦ Spacer ♦ Transconductance
Abstract In this article, the RF and analog performance of junctionless accumulation-mode bulk FinFETs is analyzed by employing the variation of fin width so that it can be used as a high-efficiency RF integrated circuit design. The RF/analog performance evaluation has been carried out using the ATLAS 3D device simulator in terms of evaluation of figure-of-merits metrics such as transconductance $(g_{m}),$ gate-to-source/drain capacitances $(C_{gg}),$ cutoff frequency $(f_{T}),$ and maximum frequency of oscillation $(f_{max}).$ Apart from RF/analog performance investigation, the variation of ON-current to OFF-current ratio $(I_{ON}/I_{OFF})$ and transconductance generation factor $(g_{m}/I_{ds})$ have also been carried out. From this study, it is observed that smaller fin width of the device improves its performance.
ISSN 15504832
Age Range 18 to 22 years ♦ above 22 year
Educational Use Research
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2016-05-01
Publisher Place New York
e-ISSN 15504840
Journal ACM Journal on Emerging Technologies in Computing Systems (JETC)
Volume Number 12
Issue Number 4
Page Count 12
Starting Page 1
Ending Page 12


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Source: ACM Digital Library