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Author Ling An ♦ Xiuchen Jiang ♦ Zhendong Han
Sponsorship National Natural Science Foundation of China (NSFC) ♦ Region Centre ♦ Ville de Tours ♦ Conseil General D'Indre et Loire ♦ ABB ♦ IEEE ♦ Sandia National Laboratories ♦ TOSHIBA
Source IEEE Xplore Digital Library
Content type Text
Publisher Institute of Electrical and Electronics Engineers, Inc. (IEEE)
File Format PDF
Copyright Year ©1994
Language English
Subject Domain (in DDC) Natural sciences & mathematics ♦ Physics ♦ Electricity & electronics ♦ Technology ♦ Engineering & allied operations ♦ Applied physics
Subject Keyword Density measurement ♦ Pollution measurement ♦ Atmospheric measurements ♦ Voltage ♦ Dielectrics and electrical insulation ♦ Resistors ♦ Power measurement ♦ Surface contamination ♦ Electrical resistance measurement ♦ Circuits
Abstract Equivalent salt deposit density (ESDD) is widely used to describe the state of contaminated insulators. In this paper, a new method of ESDD on-site measurement is studied. Two types of sensors are designed, which can not only carry enough water for the contamination on the insulator surface to dissolve and cover the insulator surface with conducting solution, but also measure the conductance of the solution. The design of the sensors and the determination of the desired parameter are introduced in detail. Experiments prove that the conductance of the contamination solution is linear with the square root of ESDD of the insulator. This relationship can also be deduced by Debye-Huckel-Onsager theory. According to this relationship, the conductance measured by the sensor can be converted to ESDD. Therefore, Measuring ESDD on-site can be realized.
Description Author affiliation :: Electr. Power Sch., Shanghai Jiao Tong Univ., China
ISSN 10709878
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2002-08-01
Publisher Place U.S.A.
Rights Holder Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Volume Number 9
Issue Number 4
Size (in Bytes) 382.88 kB
Page Count 7
Starting Page 562
Ending Page 568


Source: IEEE Xplore Digital Library