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Author Cheng, Kangguo ♦ Leburton, Jean-Pierre ♦ Hess, Karl ♦ Lyding, Joseph W.
Sponsorship (US)
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Publisher The American Physical Society
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ ANNEALING ♦ DEUTERIUM ♦ ELECTRONS ♦ ISOTOPE EFFECTS ♦ PHYSICS ♦ SUBSTRATES ♦ TRANSISTORS ♦ TUNNELING
Abstract The interpretation of the small hydrogen/deuterium isotope effect widely observed under uniform stress has been based on an implicit assumption that interface traps in the entire channel are passivated by deuterium after the deuterium annealing process. Through a stress/anneal process, we show that this assumption is incorrect. Instead, our results clearly suggest that interface trap generation under both nonuniform channel hot-carrier stress and uniform stress, such as Fowler--Nordheim tunneling and substrate electron injection, essentially follows the same mechanism, which is the breaking of Si--H(D) bonds and the release of hydrogen/deuterium at the oxide/silicon interface. {copyright} 2001 American Institute of Physics.
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 2001-08-06
Publisher Place United States
Journal Applied Physics Letters
Volume Number 79
Issue Number 6


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