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Author Huang, D. ♦ Visconti, P. ♦ Jones, K. M. ♦ Reshchikov, M. A. ♦ Yun, F. ♦ Baski, A. A. ♦ King, T. ♦ Morkoc , H.
Sponsorship (US)
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Publisher The American Physical Society
Language English
Subject Keyword MATERIALS SCIENCE ♦ ATOMIC FORCE MICROSCOPY ♦ BUFFERS ♦ ELECTRON DIFFRACTION ♦ ETCHING ♦ MOLECULAR BEAM EPITAXY ♦ PHYSICS ♦ REFLECTION ♦ SAPPHIRE ♦ SUBSTRATES
Abstract The polarity of GaN films grown using GaN and AlN buffer layers on sapphire substrates by molecular beam epitaxy were investigated by atomic force microscopy, hot wet chemical etching, and reflection high-energy electron diffraction. We found that the GaN films grown on high temperature AlN ({gt}890{degree}C) and GaN (770{endash}900{degree}C) buffer layers invariably show Ga and N polarity, respectively. However, the films grown using low temperature ({similar_to}500{degree}C) buffer layers, either GaN or AlN, could have either Ga or N polarity, depending on the growth rate of the buffer layer. {copyright} 2001 American Institute of Physics.
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 2001-06-25
Publisher Place United States
Journal Applied Physics Letters
Volume Number 78
Issue Number 26


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