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Author Huber, Martin ♦ Daumiller, Ingo ♦ Andreev, Andrei ♦ Silvestri, Marco ♦ Knuuttila, Lauri ♦ Lundskog, Anders ♦ Wahl, Michael ♦ Kopnarski, Michael ♦ Bonanni, Alberta
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ♦ ALUMINIUM NITRIDES ♦ ATOMS ♦ CHANNELING ♦ CONCENTRATION RATIO ♦ CURRENT DENSITY ♦ ELECTRIC POTENTIAL ♦ GALLIUM NITRIDES ♦ LAYERS ♦ LEAKAGE CURRENT ♦ MASS SPECTROSCOPY ♦ PROBES ♦ SATURATION ♦ SILICON ♦ TOMOGRAPHY
Abstract Complementary studies of atom probe tomography, secondary ion mass spectrometry, and vertical current-voltage measurements are carried out in order to unravel the influence of C-doping of GaN on the vertical leakage current of AlN/AlGaN/GaN:C heterostructures. A systematic increment of the vertical blocking voltage at a given current density is observed in the structures, when moving from the nominally undoped conditions—corresponding to a residual C-background of ∼10{sup 17 }cm{sup −3}—to a C-content of ∼10{sup 19 }cm{sup −3} in the GaN layer. The value of the vertical blocking voltage saturates for C concentrations higher than ∼10{sup 19 }cm{sup −3}. Atom probe tomography confirms the homogeneity of the GaN:C layers, demonstrating that there is no clustering at C-concentrations as high as 10{sup 20 }cm{sup −3}. It is inferred that the vertical blocking voltage saturation is not likely to be related to C-clustering.
ISSN 00218979
Educational Use Research
Learning Resource Type Article
Publisher Date 2016-03-28
Publisher Place United States
Journal Journal of Applied Physics
Volume Number 119
Issue Number 12


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