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Author Levander, A. X. ♦ Tseng, A. ♦ Dubon, O. D. ♦ Wu, J. ♦ Yu, K. M. ♦ Walukiewicz, W. ♦ Novikov, S. V. ♦ Foxon, C. T.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword MATERIALS SCIENCE ♦ CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ♦ AMORPHOUS STATE ♦ BISMUTH COMPOUNDS ♦ CONCENTRATION RATIO ♦ CRYSTAL GROWTH ♦ CRYSTALS ♦ ENERGY GAP ♦ EV RANGE ♦ GALLIUM NITRIDES ♦ LAYERS ♦ MATRIX MATERIALS ♦ MOLECULAR BEAM EPITAXY ♦ SAPPHIRE ♦ SEMICONDUCTOR MATERIALS ♦ SUBSTRATES ♦ CORUNDUM ♦ CRYSTAL GROWTH METHODS ♦ DIMENSIONLESS NUMBERS ♦ ENERGY RANGE ♦ EPITAXY ♦ GALLIUM COMPOUNDS ♦ MATERIALS ♦ MINERALS ♦ NITRIDES ♦ NITROGEN COMPOUNDS ♦ OXIDE MINERALS ♦ PNICTIDES
Abstract Through nonequilibrium low-temperature molecular beam epitaxy, we have grown GaN{sub 1-x}Bi{sub x} alloys on sapphire substrates with x up to 0.11. The GaN{sub 1-x}Bi{sub x} alloys are found to be amorphous with GaN crystals distributed throughout the film. A dramatic reduction in the optical band gap from 3.4 eV in GaN to as low as 1.2 eV for x{approx}0.11 was qualitatively explained by formation of a narrow band originating from anticrossing interaction between Bi localized states and the extended states of the GaN matrix.
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 2010-10-04
Publisher Place United States
Journal Applied Physics Letters
Volume Number 97
Issue Number 14


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