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Author Okugawa, M. ♦ Nakamura, R. ♦ Numakura, H. ♦ Ishimaru, M. ♦ Watanabe, K. ♦ Yasuda, H.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ♦ AGING ♦ AMBIENT TEMPERATURE ♦ AMORPHOUS STATE ♦ COMPUTERIZED SIMULATION ♦ CONFIGURATION ♦ DEPOSITION ♦ DEPOSITS ♦ DISTRIBUTION FUNCTIONS ♦ ELECTRONS ♦ FILMS ♦ GERMANIUM ♦ LIQUIDS ♦ MOLECULAR DYNAMICS METHOD ♦ NANOSTRUCTURES ♦ PEAKS ♦ QUENCHING ♦ SPUTTERING ♦ TEMPERATURE RANGE 0273-0400 K ♦ VAPOR DEPOSITED COATINGS
Abstract The structure of amorphous Ge (a-Ge) films prepared by sputter-deposition and the effects of aging at ambient temperature and pressure were studied by pair-distribution-function (PDF) analysis from electron scattering and molecular dynamics simulations. The PDFs of the as-deposited and aged samples for 3–13 months showed that the major peaks for Ge-Ge bonds decrease in intensity and broaden with aging for up to 7 months. In the PDFs of a-Ge of molecular dynamics simulation obtained by quenching liquid at different rates, the major peak intensities of a slowly cooled model are higher than those of a rapidly cooled model. Analyses on short- and medium-range configurations show that the slowly cooled model includes a certain amount of medium-range ordered (MRO) clusters, while the rapidly cooled model includes liquid-like configurations rather than MRO clusters. The similarity between experimental and computational PDFs implies that as-deposited films are similar in structure to the slowly cooled model, whereas the fully aged films are similar to the rapidly cooled model. It is assumed that as they undergo room-temperature aging, the MRO clusters disintegrate and transform into liquid-like regions in the same matrix. This transition in local configurations is discussed in terms of instability and the non-equilibrium of nanoclusters produced by a vapor-deposition process.
ISSN 00218979
Educational Use Research
Learning Resource Type Article
Publisher Date 2016-06-07
Publisher Place United States
Journal Journal of Applied Physics
Volume Number 119
Issue Number 21


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