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Author Hong, Suk-Kyoung ♦ Yang, B. ♦ Oh, Sang Hyun ♦ Kang, Young Min ♦ Kang, Nam Soo ♦ Hwang, Cheol Seong ♦ Kwon, Oh Seong
Sponsorship (US)
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Publisher The American Physical Society
Language English
Subject Keyword MATERIALS SCIENCE ♦ CAPACITORS ♦ CHEMICAL VAPOR DEPOSITION ♦ DIELECTRIC MATERIALS ♦ PERFORMANCE ♦ THERMAL CYCLING ♦ THERMAL EXPANSION ♦ THIN FILMS
Abstract The thermal stress effects of the inter-level dielectric (ILD) layer on the ferroelectric performance of integrated Pt/SrBi{sub 2}Ta{sub 2}O{sub 9}(SBT)/Pt capacitors were investigated. Two different thin film materials, pure SiO{sub 2} grown at 650{degree}C and B- and P-doped SiO{sub 2} grown at 400{degree}C by chemical vapor deposition techniques, were tested as an ILD layer. The ILD layer encapsulated the SBT capacitor array. During high temperature thermal cycling (up to 800{degree}C) after ILD deposition, which is used for both densifying the ILD and curing of the various damage imposed on the SBT capacitors, a large thermal stress occurred in the bottom Pt layer due to the thermal expansion mismatch between the various layers. In particular, the pure SiO{sub 2} ILD layer between the capacitors did not allow thermal expansion of the Pt layers, which led to a large accumulation of compressive stress in the layer. This resulted in hillock formation in the bottom Pt layer and eventual capacitor failure. However, the B- and P-doped SiO{sub 2} ILD layer contracted during thermal cycling by removing residual impurities, which allowed greater expansion of the Pt layer. Therefore, compressive stress accumulation did not occur and excellent ferroelectric properties were thus obtained from the integrated capacitor array. {copyright} 2001 American Institute of Physics.
ISSN 00218979
Educational Use Research
Learning Resource Type Article
Publisher Date 2001-06-15
Publisher Place United States
Journal Journal of Applied Physics
Volume Number 89
Issue Number 12


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