Thumbnail
Access Restriction
Open

Author Wang, Lihua ♦ Kong, Deli ♦ Xin, Tianjiao ♦ Shu, Xinyu ♦ Zheng, Kun ♦ Xiao, Lirong ♦ Sha, Xuechao ♦ Lu, Yan ♦ Han, Xiaodong ♦ Zhang, Ze ♦ Zou, Jin
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword MATERIALS SCIENCE ♦ CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ BENDING ♦ DISLOCATIONS ♦ NANOWIRES ♦ PLASTICITY ♦ STRAINS ♦ SURFACES
Abstract In this study, the deformation mechanisms of bent Si nanowires are investigated at the atomic scale with bending strain up to 12.8%. The sign and magnitude of the applied strain are found to govern their deformation mechanisms, in which the dislocation types (full or partial dislocations) can be affected by the sign (tensile or compressive) and magnitude of the applied strain. In the early stages of bending, plastic deformation is controlled by 60° full dislocations. As the bending increases, Lomer dislocations can be frequently observed. When the strain increases to a significant level, 90° partial dislocations induced from the tensile surfaces of the bent nanowires are observed. This study provides a deeper understanding of the effect of the sign and magnitude of the bending strain on the deformation mechanisms in bent Si nanowires.
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 2016-04-11
Publisher Place United States
Journal Applied Physics Letters
Volume Number 108
Issue Number 15


Open content in new tab

   Open content in new tab