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Author Hara, K. ♦ Kochiyama, M. ♦ Mochizuki, A. ♦ Sega, T. ♦ Arai, Y. ♦ Fukuda, K. ♦ Hayashi, H. ♦ Hirose, M. ♦ Ida, J. ♦ Ikeda, H. ♦ Ikegami, Y. ♦ Ikemoto, Y. ♦ Kawai, Y. ♦ Kohriki, T. ♦ Komatsubara, H. ♦ Miyake, H. ♦ Miyoshi, T. ♦ Ohno, M. ♦ Okihara, M. ♦ Terada, S. ♦ Tsuboyama, T. ♦ Unno, Y.
Sponsorship IEEE Nuclear and Plasma Sciences Society ♦ Computer Applications in Nuclear and Plasma Sciences (CANPS) ♦ Lawrence Berkeley Lab. ♦ Lawrence Livermore Nat. Lab. ♦ APS ♦ College of William and Mary ♦ Continuous Electron Beam Accelerator Facility ♦ NASA ♦ Defence Nuclear Agency ♦ Sandia National Laboratories ♦ Jet Propulsion Laboratory ♦ Brookhaven Nat. Lab. ♦ Lawrence Livermore Nat. Lab ♦ IEEE/NPPS Radiat. Effects Committee ♦ Defence Nuclear Agency/DoD ♦ Sandia National Laboratories/DOE ♦ Jet Propulsion Laboratory/NASA ♦ Phillips Lab./DoD
Source IEEE Xplore Digital Library
Content type Text
Publisher Institute of Electrical and Electronics Engineers, Inc. (IEEE)
File Format PDF
Copyright Year ©1963
Language English
Subject Domain (in DDC) Natural sciences & mathematics ♦ Physics ♦ Modern physics ♦ Technology ♦ Medicine & health ♦ Engineering & allied operations ♦ Applied physics
Subject Keyword Pixel ♦ Silicon ♦ Conductivity ♦ Large Hadron Collider ♦ Readout electronics ♦ Fabrication ♦ Gas detectors ♦ Protons ♦ Testing ♦ Costs ♦ threshold shift ♦ FD-SOI ♦ monolithic pixel
Abstract Silicon-on-insulator (SOI) technology is being investigated for monolithic pixel device fabrication. The SOI wafers by UNIBOND allow the silicon resistivity to be optimized separately for the electronics and detector parts. We have fabricated pixel detectors using fully depleted SOI (FD-SOI) technology provided by OKI Semiconductor Co. Ltd. The first pixel devices consisting of 32times32 matrix with 20 mum times 20 mum pixels were irradiated with <sup>60</sup>Co gamma's up to 0.60 MGy and with 70-MeV protons up to 9.3times10 <sup>60</sup>Co p/cm<sup>2</sup>. The performance characterization was made on the electronics part and as a photon detector from the response to reset signals and to laser. The electronics operation was affected by radiation-induced charge accumulation in the oxide layers. Detailed evaluation of the characteristics changes in the transistors was separately carried out using transistor test structures to which a wider range of irradiation, from 0.12 kGy to 5.1 MGy, was made with <sup>60</sup>Co gamma's.
Description Author affiliation :: IPNS, High Energy Accel. Res. Organ., Tsukuba, Japan
Author affiliation :: OKI Semicond. Miyagi Co. Ltd., Ohira, Japan
Author affiliation :: OKI Semicond. Co. Ltd., Hachioji, Japan
Author affiliation :: Grad. Sch. of Pure & Appl. Sci., Univ. of Tsukuba, Tsukuba, Japan
Author affiliation :: Grad. Sch. of Sci., Osaka Univ., Toyonaka, Japan
Author affiliation :: ISAS, Japan Aerosp. Exploration Agency, Sagamihara, Japan
ISSN 00189499
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2009-10-01
Publisher Place U.S.A.
Rights Holder Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Volume Number 56
Issue Number 5
Size (in Bytes) 1.48 MB
Page Count 9
Starting Page 2896
Ending Page 2904


Source: IEEE Xplore Digital Library