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Author Fong, S. W. ♦ Wong, H. -S. P. ♦ Sood, A. ♦ Chen, L. ♦ Kumari, N. ♦ Gibson, G. A. ♦ Asheghi, M. ♦ Goodson, K. E.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ♦ ALUMINIUM OXIDES ♦ DENSITY ♦ DIELECTRIC MATERIALS ♦ FINITE ELEMENT METHOD ♦ JOULE HEATING ♦ LAYERS ♦ MEMORY DEVICES ♦ MOLECULAR DYNAMICS METHOD ♦ SILICA ♦ SILICON NITRIDES ♦ SILICON OXIDES ♦ SIMULATION ♦ STEADY-STATE CONDITIONS ♦ TEMPERATURE DEPENDENCE ♦ TEMPERATURE RANGE 0273-0400 K ♦ THERMAL BOUNDARY RESISTANCE ♦ THERMAL CONDUCTIVITY ♦ THIN FILMS
Abstract In this work, we investigate the temperature-dependent thermal conductivities of few nanometer thick alternating stacks of amorphous dielectrics, specifically SiO{sub 2}/Al{sub 2}O{sub 3} and SiO{sub 2}/Si{sub 3}N{sub 4}. Experiments using steady-state Joule-heating and electrical thermometry, while using a micro-miniature refrigerator over a wide temperature range (100–500 K), show that amorphous thin-film multilayer SiO{sub 2}/Si{sub 3}N{sub 4} and SiO{sub 2}/Al{sub 2}O{sub 3} exhibit through-plane room temperature effective thermal conductivities of about 1.14 and 0.48 W/(m × K), respectively. In the case of SiO{sub 2}/Al{sub 2}O{sub 3}, the reduced conductivity is attributed to lowered film density (7.03 → 5.44 × 10{sup 28 }m{sup –3} for SiO{sub 2} and 10.2 → 8.27 × 10{sup 28 }m{sup –3} for Al{sub 2}O{sub 3}) caused by atomic layer deposition of thin-films as well as a small, finite, and repeating thermal boundary resistance (TBR) of 1.5 m{sup 2} K/GW between dielectric layers. Molecular dynamics simulations reveal that vibrational mismatch between amorphous oxide layers is small, and that the TBR between layers is largely due to imperfect interfaces. Finally, the impact of using this multilayer dielectric in a dash-type phase-change memory device is studied using finite-element simulations.
ISSN 00218979
Educational Use Research
Learning Resource Type Article
Publisher Date 2016-07-07
Publisher Place United States
Journal Journal of Applied Physics
Volume Number 120
Issue Number 1


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