Thumbnail
Access Restriction
Open

Author Carroll, M. S. ♦ Sturm, J. C. ♦ Napolitani, E. ♦ De Salvador, D. ♦ Berti, M. ♦ Stangl, J. ♦ Bauer, G. ♦ Tweet, D. J.
Sponsorship (US)
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Publisher The American Physical Society
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ ANNEALING ♦ ATOMS ♦ CARBON ♦ DIFFUSION ♦ INTERSTITIALS ♦ NITROGEN ♦ OXIDATION ♦ OXYGEN ♦ REMOVAL ♦ SILICON ♦ SUBSTRATES ♦ X-RAY DIFFRACTION
Abstract The effect of annealing 25-nm-thick pseudomorphic Si{sub 0.7865}Ge{sub 0.21}C{sub 0.0035} layers on silicon substrates in nitrogen or oxygen at 850{sup o}C was examined for different silicon cap thicknesses and annealing times by x-ray diffraction and secondary-ion mass spectrometry. Carbon is found to diffuse rapidly out of the SiGeC layer and even out of the sample entirely, an effect that is enhanced by oxidation and thin cap layers. All substitutional carbon can be removed from the sample in some cases, implying negligible formation of silicon-carbon complexes. Furthermore, it is found that each injected silicon interstitial atom due to oxidation causes the removal of one additional carbon atom for the SiGeC layer.
ISSN 01631829
Educational Use Research
Learning Resource Type Article
Publisher Date 2001-08-15
Publisher Place United States
Journal Physical Review B
Volume Number 64
Issue Number 7


Open content in new tab

   Open content in new tab