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Author Tadaki, Daisuke ♦ Ma, Teng ♦ Niwano, Michio ♦ Zhang, Jinyu ♦ Iino, Shohei ♦ Hirano-Iwata, Ayumi ♦ Kimura, Yasuo ♦ Rosenberg, Richard A.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ♦ CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ ALUMINIUM ♦ DOPED MATERIALS ♦ ELECTRODES ♦ ELECTRONIC EQUIPMENT ♦ FABRICATION ♦ INJECTION ♦ LAYERS ♦ ORGANIC MATTER ♦ PHOTOELECTRON SPECTROSCOPY ♦ POLYMERS ♦ P-TYPE CONDUCTORS ♦ SILICA ♦ SILICON OXIDES ♦ THIN FILMS ♦ TRANSISTORS
Abstract Organic thin film transistors (OTFTs) have been explored because of their advantageous features such as light-weight, flexible, and large-area. For more practical application of organic electronic devices, it is very important to realize OTFTs that are composed only of organic materials. In this paper, we have fabricated p{sup +}-i-p{sup +} type of OTFTs in which an intrinsic (i) regioregular poly (3-hexylthiophene) (P3HT) layer is used as the active layer and highly doped p-type (p{sup +}) P3HT is used as the source and drain electrodes. The 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F{sub 4}-TCNQ) was used as the p-type dopant. A fabricating method of p{sup +}-i-p{sup +} OTFTs has been developed by using SiO{sub 2} and aluminum films as capping layers for micro-scaled patterning of the p{sup +}-P3HT electrodes. The characteristics of the OTFTs were examined using the photoelectron spectroscopy and electrical measurements. We demonstrated that the fabricated p{sup +}-i-p{sup +} OTFTs work with carrier injection through a built-in potential at p{sup +}/i interfaces. We found that the p{sup +}-i-p{sup +} OTFTs exhibit better FET characteristics than the conventional P3HT-OTFT with metal (Au) electrodes, indicating that the influence of a carrier injection barrier at the interface between the electrode and the active layer was suppressed by replacing the metal electrodes with p{sup +}-P3HT layers.
ISSN 00218979
Educational Use Research
Learning Resource Type Article
Publisher Date 2016-04-21
Publisher Place United States
Journal Journal of Applied Physics
Volume Number 119
Issue Number 15


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