Access Restriction

Author Bishop, S.M. ♦ Briggs, B.D. ♦ Leedy, K.D. ♦ Bakhru, H. ♦ Cady, N.C.
Source IEEE Xplore Digital Library
Content type Text
Publisher Institute of Electrical and Electronics Engineers, Inc. (IEEE)
File Format PDF
Copyright Year ©2011
Language English
Subject Domain (in DDC) Natural sciences & mathematics ♦ Physics ♦ Electricity & electronics ♦ Technology ♦ Engineering & allied operations ♦ Applied physics
Subject Keyword Copper ♦ Hafnium compounds ♦ Switches ♦ Electrodes ♦ Ion implantation ♦ Educational institutions ♦ Performance evaluation
Abstract Transition metal oxide resistive memory devices (RMDs) are a promising replacement for transistor-based non-volatile memory. Because of their vertical metal-insulator-metal design, resistive memory devices have the potential for smaller footprints and higher densities than their transistor counterparts. To fully realize the spatial and performance advantages of these devices, new integration pathways must be developed that are compatible with state-of-the-art CMOS (complementary metal-oxide semiconductor) processing. Because there is a significant lack of information available in the open literature on the fabrication of nanoscale resistive memory devices, the objective of this work was to explore multiple process routes for fabricating these devices in a via-based platform that is transferable to current CMOS technology nodes.
Description Author affiliation: University at Albany, SUNY, College of Nanoscale Science and Engineering, Albany, NY 12203, U.S.A. (Bishop, S.M.; Briggs, B.D.; Bakhru, H.; Cady, N.C.) || Air Force Research Laboratory, 2241 Avionics Circle, Dayton, OH, 45433, U.S.A. (Leedy, K.D.)
ISBN 9781457717550
Educational Role Student ♦ Teacher
Age Range above 22 year
Educational Use Research ♦ Reading
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2011-12-07
Publisher Place USA
Rights Holder Institute of Electrical and Electronics Engineers, Inc. (IEEE)
e-ISBN 9781457717567
Size (in Bytes) 371.16 kB
Page Count 2
Starting Page 1
Ending Page 2

Source: IEEE Xplore Digital Library