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Author Yuanzhe Xu ♦ Wenjian Yu ♦ Quan Chen ♦ Lijun Jiang ♦ Ngai Wong
Source IEEE Xplore Digital Library
Content type Text
Publisher Institute of Electrical and Electronics Engineers, Inc. (IEEE)
File Format PDF
Copyright Year ©2012
Language English
Subject Domain (in DDC) Technology ♦ Engineering & allied operations ♦ Applied physics
Subject Keyword Mathematical model ♦ Through-silicon vias ♦ Solid modeling ♦ Three dimensional displays ♦ Equations ♦ Surface roughness ♦ Rough surfaces
Abstract In this paper, we present a variational electromagnetic-semiconductor coupled solver to assess the impacts of process variations on the 3D integrated circuit (3D IC) on-chip structures. The solver employs the finite volume method (FVM) to handle a system of equation considering both the full-wave electromagnetic effects and semiconductor effects. With a smart geometrical variation model for the FVM discretization, the solver is able to handle both small-size or large-size variations. Moreover, a weighted principle factor analysis (wPFA) technique is presented to reduce the random variables in both electromagnetic and semiconductor regions, and the spectral stochastic collocation method (SSCM) [10] is used to generate the quadratic statistical model. Numerical results validate the accuracy and efficiency of this solver in dealing with process variations in hybrid material through-silicon via (TSV) structures.
Description Author affiliation: Department of Computer Science and Technology, Tsinghua University, Beijing 100084, China (Wenjian Yu) || Department of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong (Yuanzhe Xu; Quan Chen; Lijun Jiang; Ngai Wong)
ISBN 9781457721458
ISSN 15301591
Educational Role Student ♦ Teacher
Age Range above 22 year
Educational Use Research ♦ Reading
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2012-03-12
Publisher Place Germany
Rights Holder European Design Automation Association (EDAA)
Size (in Bytes) 609.67 kB
Page Count 4
Starting Page 1409
Ending Page 1412


Source: IEEE Xplore Digital Library