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Author Hana, S. ♦ Kaneta, R. ♦ Nasir, S. ♦ Sasaki, K. ♦ Hata, T.
Sponsorship Mems Technol.(M) Sdn, Bhd ♦ Kriptic Devices (M) Sdn Bhd ♦ IEEE Electron Devices Soc
Source IEEE Xplore Digital Library
Content type Text
Publisher Institute of Electrical and Electronics Engineers, Inc. (IEEE)
File Format PDF
Copyright Year ©2002
Language English
Subject Domain (in DDC) Natural sciences & mathematics ♦ Physics ♦ Electricity & electronics ♦ Technology ♦ Engineering & allied operations ♦ Applied physics
Subject Keyword Sputtering ♦ Solids ♦ Radio frequency ♦ Lead ♦ Argon ♦ Dielectric thin films ♦ Thin film devices ♦ Optical device fabrication ♦ Fluid flow ♦ Powders
Abstract A new target for RF reactive sputter deposition technique was adopted to deposit lead zirconate titanate (Pb(Zr,Ti)O/sub 3/) thin films using a metal-oxide composite (ZrTi+30%PbO/sub n/ (n=l,2)) targets. PZT films were deposited on Pt/Ti/SiO/sub 2//Si substrate with temperature varied from 200 to 550/spl deg/C, O/sub 2/-Ar mixture gas was used for the sputtering with changing the mixing ratio from 0% to 6.3%. In this study it is confirmed that PbO/sub 2/ supplied more oxygen than PbO by the gas analyzer. Moreover perovskite PZT peak was observed in XRD measurement for film grown with PbO/sub 2/ target without introducing any oxygen gas during the deposition, whereas no peak was observed for PbO target under the same conditions.
Description Author affiliation: Graduate Sch. of Natural Sci. & Technol., Kanazawa Univ., Japan (Hana, S.; Kaneta, R.; Nasir, S.; Sasaki, K.; Hata, T.)
ISBN 0780375785
Educational Role Student ♦ Teacher
Age Range above 22 year
Educational Use Research ♦ Reading
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2002-12-19
Publisher Place Malaysia
Rights Holder Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Size (in Bytes) 246.02 kB
Page Count 5
Starting Page 378
Ending Page 382


Source: IEEE Xplore Digital Library