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Author Paine, H. ♦ Delaney, M.
Source IEEE Xplore Digital Library
Content type Text
Publisher Institute of Electrical and Electronics Engineers, Inc. (IEEE)
File Format PDF
Copyright Year ©1997
Language English
Subject Domain (in DDC) Natural sciences & mathematics ♦ Physics ♦ Electricity & electronics
Subject Keyword Radio frequency ♦ Gallium arsenide ♦ MMICs ♦ Temperature ♦ Life testing ♦ FETs ♦ Circuits ♦ Power measurement ♦ Space technology ♦ Radiofrequency amplifiers
Abstract We have conducted a program of lifetesting on a series of MESFET MMICs. The circuits were small-signal MMICs, designed by Hughes. They were fabricated by a single commercial foundry: Raytheon TI Systems Inc. The technology involves ion-implanted GaAs, with e-beam gates of 0.50 and 0.25 /spl mu/m length. The 0.25 /spl mu/m devices also have an implanted p-type layer for better noise figure.
Description Author affiliation: Hughes Space & Commun. Co., Los Angeles, CA, USA (Paine, H.)
ISBN 0790800640
Educational Role Student ♦ Teacher
Age Range above 22 year
Educational Use Research ♦ Reading
Education Level UG and PG
Learning Resource Type Article
Publisher Date 1997-10-12
Publisher Place USA
Rights Holder Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Size (in Bytes) 429.47 kB
Page Count 9
Starting Page 40
Ending Page 48


Source: IEEE Xplore Digital Library