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Author Chun-Sheng Lin ♦ Jun-Jie Huang ♦ Chi-Shen Lo ♦ Long-Siang Chuang
Sponsorship Taiwan Semicond. Ind. Assoc. (TSIA) ♦ IEEE Electron Devices Soc. Taipei Chapter ♦ IEEE Electron Devices Soc. ♦ Committee for Precision Machinery Ind. Dev. MOEA ♦ Semicond. Ind. Promotion Office Ind. Dev. Bureau, MOEA
Source IEEE Xplore Digital Library
Content type Text
Publisher Institute of Electrical and Electronics Engineers, Inc. (IEEE)
File Format PDF
Copyright Year ©2002
Language English
Subject Domain (in DDC) Technology ♦ Engineering & allied operations ♦ Applied physics
Subject Keyword Passivation ♦ Plasmas ♦ Scanning electron microscopy ♦ Electrodes ♦ Seals ♦ Optical films ♦ Optical microscopy ♦ Semiconductor device manufacture ♦ Manufacturing industries ♦ Semiconductor films
Abstract Arcing defect was found after passivation HDP film deposition. According to arcing defect cross-section analysis, passivation arcing occurrence shows a strong correlation with the metal exposed on the wafer. Metal exposed likes an electrode which will attract plasma to discharge on this position and caused arcing problem. Therefore, there are two approaches to suppress passivation arcing occurrence. One is to avoid metal exposed as an electrode and the other is to avoid unstable plasma discharged on wafer. New unbias liner oxide recipe was implemented to solve passivation arcing problem. It is proposed to increase the unbias liner oxide thickness under zero bias setting and to add additional buffer step for bias power ramp up step after the unbias liner oxide deposition. The thicker unbias liner oxide thickness can be isolated from exposed metal to contact with HDP high energy plasma directly, so the plasma will not be discharged on that position. And an additional buffer step for the bias power ramp up step can avoid the bias power overshot. This can prevent the unstable plasma being discharged on the wafer. According to our experiment and tracing results, the new unbias liner recipe is very effective to suppress passivation arcing occurrence and without other side effect.
Description Author affiliation: Taiwan Semicond. Manuf. Co., Hsin-Chu, Taiwan (Chun-Sheng Lin; Jun-Jie Huang; Chi-Shen Lo; Long-Siang Chuang)
ISBN 0780376048
Educational Role Student ♦ Teacher
Age Range above 22 year
Educational Use Research ♦ Reading
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2002-12-11
Publisher Place China
Rights Holder Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Size (in Bytes) 734.90 kB
Page Count 4
Starting Page 161
Ending Page 164

Source: IEEE Xplore Digital Library