Thumbnail
Access Restriction
Subscribed

Author Bartsch, W. ♦ Thomas, B. ♦ Mitlehner, H. ♦ Bloecher, B. ♦ Gediga, S.
Source IEEE Xplore Digital Library
Content type Text
Publisher Institute of Electrical and Electronics Engineers, Inc. (IEEE)
File Format PDF
Copyright Year ©2007
Language English
Subject Domain (in DDC) Natural sciences & mathematics ♦ Physics ♦ Electricity & electronics ♦ Technology ♦ Engineering & allied operations ♦ Applied physics
Subject Keyword Measurement ♦ Passive component ♦ Temperature ♦ Metallization ♦ Power semiconductor device ♦ Radiative recombination ♦ Semiconductor diodes ♦ Stress ♦ Bipolar device ♦ Semiconductor device measurement ♦ Power measurement ♦ Silicon carbide ♦ Voltage ♦ Power semiconductor devices
Abstract In this work we discuss static measurements on bipolar 6.5 kV-SiC-diodes which were fabricated on 4H-SiC wafers preferentially cut 4deg off the (0001) basal plane in order to prove design rules developed for Si-devices. To suppress emitter recombination currents, the p-emitter thickness has to be increased. The switching behaviour of optimized 6.5 kV-diodes with a 3 mum thick p-emitter at different current levels at DC link voltages of 4 kV and at junction temperatures up to 125degC is shown. For these diodes first results on forward stability are also presented.
Description Author affiliation: SiCED Electron. Dev. GmbH & Co. KG, Erlangen (Bartsch, W.; Thomas, B.; Mitlehner, H.)
ISBN 9789275815108
Educational Role Student ♦ Teacher
Age Range above 22 year
Educational Use Research ♦ Reading
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2007-09-02
Publisher Place Denmark
Rights Holder EPE Association
Size (in Bytes) 523.78 kB
Page Count 10
Starting Page 1
Ending Page 10


Source: IEEE Xplore Digital Library