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Author Pott, V. ♦ Ionescu, A.M. ♦ Fritschi, R. ♦ Hibert, C. ♦ Fluckiger, P. ♦ Declercq, M. ♦ Renaud, P. ♦ Rusu, A. ♦ Dobrescu, D. ♦ Dobrescu, L.
Sponsorship IEEE-Electron Devices Soc.
Source IEEE Xplore Digital Library
Content type Text
Publisher Institute of Electrical and Electronics Engineers, Inc. (IEEE)
File Format PDF
Copyright Year ©2001
Language English
Subject Domain (in DDC) Technology ♦ Engineering & allied operations ♦ Applied physics
Subject Keyword MOSFET circuits ♦ Voltage ♦ Capacitance ♦ Radio frequency ♦ Switches ♦ Microelectromechanical devices ♦ Equations ♦ Numerical simulation ♦ SPICE ♦ Polynomials
Abstract This paper reports on the modeling and key design aspects of an innovative MEMS device: the suspended-gate MOSFET (SG-MOSFET). Based on the coupled-electromechanical equations describing the suspended gate actuation, we present the investigation of the pull-in voltages and of the capacitance switching and tuning ranges for RF applications. A quasi-analytical model is developed for the gate-to-substrate capacitance of the SG-MOSFET and then, validated by numerical simulation. A SPICE macromodel using a polynomial voltage-controlled source is validated for the DC simulation of the SG-MOSFET. Guide lines for the low-voltage design of an SG-MOSFET RF switch are detailed.
Description Author affiliation: Swiss Fed. Inst. of Technol., Lausanne, Switzerland (Pott, V.)
ISBN 0780366662
Educational Role Student ♦ Teacher
Age Range above 22 year
Educational Use Research ♦ Reading
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2001-10-09
Publisher Place Romania
Rights Holder Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Size (in Bytes) 425.33 kB
Page Count 4
Starting Page 137
Ending Page 140


Source: IEEE Xplore Digital Library