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Author Ongstad, A.P. ♦ Dente, G.C. ♦ Tilton, M.L. ♦ Chavez, J.C. ♦ Kaspi, R. ♦ Gianardi, D.M.
Sponsorship : IEEE LEO
Source IEEE Xplore Digital Library
Content type Text
Publisher Institute of Electrical and Electronics Engineers, Inc. (IEEE)
File Format PDF
Copyright Year ©2006
Language English
Subject Domain (in DDC) Technology ♦ Engineering & allied operations ♦ Applied physics
Subject Keyword Semiconductor lasers ♦ Optical resonators ♦ Brightness ♦ Mirrors ♦ Fabry-Perot ♦ Diffraction ♦ Laboratories ♦ Quantum well lasers ♦ Waveguide lasers ♦ Pump lasers
Abstract We describe high-brightness, broad-area mid-IR semiconductor lasers. These devices were fabricated in our laboratory using a commercial solid-source MBE system, configured specifically for antimonide alloy deposition. The laser structures incorporated fourteen type-II quantum wells embedded in thick waveguide/absorber regions composed of $In_{0.2}Ga_{0.8}As_{y}Sb_{1-y$ . Each type-II well is comprised of a ~24 Aring thick In0.4 $}Ga_{0.6}Sb$ hole bearing layer, which is sandwiched in between two coupled InAs electron wells; as we vary the InAs thickness from 3 to 30 Aring we tune the laser from 2.5 mum to 9.5 mum
Description Author affiliation: Air Force Res. Lab., AFRL-DELS, Kirtland AFB, NM (Ongstad, A.P.; Dente, G.C.; Tilton, M.L.; Chavez, J.C.; Kaspi, R.; Gianardi, D.M.)
ISBN 0780395603
Educational Role Student ♦ Teacher
Age Range above 22 year
Educational Use Research ♦ Reading
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2006-09-18
Publisher Place USA
Rights Holder Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Size (in Bytes) 375.74 kB
Page Count 2
Starting Page 95
Ending Page 96


Source: IEEE Xplore Digital Library