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Author Bose, S. ♦ Mazumder, S.K.
Source IEEE Xplore Digital Library
Content type Text
Publisher Institute of Electrical and Electronics Engineers, Inc. (IEEE)
File Format PDF
Copyright Year ©2011
Language English
Subject Domain (in DDC) Natural sciences & mathematics ♦ Physics ♦ Electricity & electronics ♦ Technology ♦ Engineering & allied operations ♦ Applied physics
Subject Keyword vertical power diode ♦ GaN ♦ semiconductor heterojunction ♦ Surface morphology ♦ Surface roughness ♦ Epitaxial growth ♦ Rough surfaces ♦ first principle ♦ Gallium nitride ♦ Anodes ♦ (4H)SiC
Abstract In this work, we report the characterization results of GaN/4H-SiC heterojunction vertical pn power diode. The diode is realized using four separate epitaxial growth mechanisms: a) direct growth of p-GaN over n-(4H)SiC; b) growth of p-GaN over n-(4H)SiC with AlN as the interface layer; c) growth of p-GaN over n-(4H)SiC with Ga-flux as the interface layer; and d) growth of p-GaN over p-(4H)SiC. The use of less than 2 nm AlN, as the interface material in one of the growth mechanisms is guided from the first principle atomistic simulation study. In all of these four samples, $n^{+}-doped$ (4H)SiC acts as the cathode substrate. For all of the four cases, the metallization for the anode contact is Pd(200 A°)/Au(10000 A°) while Ni(1000 A°) is used for the cathode contact. The measured forward drop of the pn diode with AlN as the interface material is found to be around 5.1 V; whereas, it is between 2 V to 3 V for the rest of the three diode samples. The measured reverse-blocking capability of all the four diode samples is found to be greater than 200 V.
Description Author affiliation: Laboratory for Energy and Switching-Electronics System, Department of Electrical and Computer Engineering, University of Illinois at Chicago, 851 South Morgan Street, Science and Engineering Office, Room No. 1020, Chicago, IL: 60607-7053, USA (Bose, S.; Mazumder, S.K.)
ISBN 9781612841670
Educational Role Student ♦ Teacher
Age Range above 22 year
Educational Use Research ♦ Reading
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2011-08-30
Publisher Place United Kingdom
Rights Holder EPE ASSOCIATION
e-ISBN 9789075815146
Size (in Bytes) 1.43 MB
Page Count 8
Starting Page 1
Ending Page 8


Source: IEEE Xplore Digital Library