Access Restriction

Author Mei Xue ♦ Kabehie, S. ♦ Stieg, A. ♦ Tkatchouk, E. ♦ Benitez, D. ♦ Goddard, W. ♦ Zink, J.I. ♦ Wang, K.L.
Source IEEE Xplore Digital Library
Content type Text
Publisher Institute of Electrical and Electronics Engineers, Inc. (IEEE)
File Format PDF
Copyright Year ©2009
Language English
Subject Domain (in DDC) Natural sciences & mathematics ♦ Physics ♦ Electricity & electronics ♦ Technology ♦ Engineering & allied operations ♦ Applied physics
Subject Keyword Nanoscale devices ♦ Copper ♦ Electrons ♦ Temperature dependence ♦ Educational institutions ♦ Paper technology ♦ Electrodes ♦ Density functional theory ♦ Tunneling ♦ Stators
Abstract Nanoscale electronics based on functional molecular units acting as state variables provide an attractive alternate to conventional MOSFET technology due to their potential scalability, low-cost, low variability, highly integrated characteristics and the capability to exploit self-assembly processes. In this work, an electrically driven sandwich-type molecular rotor device, comprised of a monolayer of transition metal complexes containing redox-active π-conjugated ligand subunits between a gold electrode and a highly-doped Si substrate, was fabricated. Experimental I–V characterization showed a negative differential resistance (NDR) associated with the device, while reference samples of individual subunits, namely the redox-active π-conjugated ligands and uncoordinated metal complexes alone, did not. Modeling of transverse molecular current conduction using time-dependent density function theory suggested the source of the observed NDR to be rotation of the ligand around Cu complexes. Optical absorption spectroscopy and the observed temperature dependence of the NDR behavior also support this hypothesis. Our calculations predicted operational speeds in the picosecond timescale. The use of molecules with a large effective mass and proper energy barriers for this device structure provides a simple means to reduce tunneling probabilities, thereby creating revolutionary potential toward ultimately scaled, nanoscale switching and memory applications.
Description Author affiliation: Chemistry, California Institute of Technology (Tkatchouk, E.; Benitez, D.; Goddard, W.) || CNSI, University of California, Los Angeles (Stieg, A.) || Chemistry and Biochemistry (Kabehie, S.; Zink, J.I.) || Device Research Laboratory, Department of Electrical Engineering (Mei Xue; Wang, K.L.)
ISBN 9781424460304
Educational Role Student ♦ Teacher
Age Range above 22 year
Educational Use Research ♦ Reading
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2009-12-09
Publisher Place USA
Rights Holder Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Size (in Bytes) 216.45 kB
Page Count 2
Starting Page 1
Ending Page 2

Source: IEEE Xplore Digital Library