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Author Guan, L.H. ♦ Yusof, A. ♦ Dolah, A. ♦ Sazli Jusoh, M. ♦ Yahya, M.R. ♦ Majlis, B.Y.
Source IEEE Xplore Digital Library
Content type Text
Publisher Institute of Electrical and Electronics Engineers, Inc. (IEEE)
File Format PDF
Copyright Year ©2004
Language English
Subject Domain (in DDC) Natural sciences & mathematics ♦ Physics ♦ Electricity & electronics ♦ Technology ♦ Engineering & allied operations ♦ Applied physics
Subject Keyword Etching ♦ Gallium arsenide ♦ Indium gallium arsenide ♦ Fabrication ♦ Semiconductor materials ♦ Lithography ♦ Resists ♦ Chemical technology ♦ Anisotropic magnetoresistance ♦ Temperature dependence
Abstract The etching of mesa layer in the fabrication of p-HEMT devices was studied and analyzed. The chemical compositions were varied to study the etch rate effect on the various materials in the mesa layer. The etching rates and selectivity of the H/sub 3/PO/sub 4/:H/sub 2/O/sub 2/:H/sub 2/O, NH/sub 4/OH:H/sub 2/O/sub 2/:H/sub 2/O and H/sub 2/SO/sub 4/:H/sub 2/O/sub 2/:H/sub 2/O is compared among GaAs, AlGaAs and InGaAs materials. The results show that the chemical ratio of 1:1:500 and 1:1:250 are suitable in the mesa etching based on the selectivity between AlGaAs over GaAs and AlGaAs over InGaAs.
Description Author affiliation: Microelectron. Unit, Telekom R&D Sdn. Bhd., Selangor, Malaysia (Guan, L.H.; Yusof, A.; Dolah, A.; Sazli Jusoh, M.; Yahya, M.R.)
ISBN 0780386582
Educational Role Student ♦ Teacher
Age Range above 22 year
Educational Use Research ♦ Reading
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2004-12-07
Publisher Place Malaysia
Rights Holder Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Size (in Bytes) 2.04 MB


Source: IEEE Xplore Digital Library