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Author Sansa, M. ♦ Paulo, A.S. ♦ Perez-Murano, F.
Source IEEE Xplore Digital Library
Content type Text
Publisher Institute of Electrical and Electronics Engineers, Inc. (IEEE)
File Format PDF
Copyright Year ©2012
Language English
Subject Domain (in DDC) Technology ♦ Engineering & allied operations ♦ Applied physics
Subject Keyword Frequency modulation ♦ Silicon ♦ Resonant frequency ♦ Nanobioscience ♦ Frequency measurement ♦ Frequency response ♦ Sensors
Abstract We present the fabrication and electrical characterization of nanomechanical resonators based on bottom-up grown silicon nanowires. The high piezoresistance coefficients of these nanowires provide an intrinsic transduction mechanism with good performance at high frequencies. We have characterized the frequency response of double clamped silicon nanowires with diameters of less than 100 nm. In particular, we have studied the first and second resonance modes, at frequencies higher than 190 MHz. We have observed the splitting of each resonance mode in two orthogonal vibration modes, which is attributed to the break-down of the axial symmetry of the nanowires. This effect can be used to improve the mass sensing performance of the devices.
Description Author affiliation: IMB-CNM, CSIC, Campus UAB, 08193 Bellaterra (Barcelona) - Spain (Sansa, M.; Paulo, A.S.; Perez-Murano, F.)
ISBN 9781457717666
ISSN 19300395
Educational Role Student ♦ Teacher
Age Range above 22 year
Educational Use Research ♦ Reading
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2012-10-28
Publisher Place Taiwan
Rights Holder Institute of Electrical and Electronics Engineers, Inc. (IEEE)
e-ISBN 9781457717673
Size (in Bytes) 826.84 kB
Page Count 4
Starting Page 1
Ending Page 4

Source: IEEE Xplore Digital Library