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Author Lee, C. ♦ Jinwei Yang ♦ Asif Khan, M. ♦ Saunier, P.
Source IEEE Xplore Digital Library
Content type Text
Publisher Institute of Electrical and Electronics Engineers, Inc. (IEEE)
File Format PDF
Copyright Year ©2003
Language English
Subject Domain (in DDC) Technology ♦ Engineering & allied operations ♦ Applied physics
Subject Keyword Aluminum gallium nitride ♦ Gallium nitride ♦ HEMTs ♦ MODFETs ♦ Silicon carbide ♦ Power generation ♦ Solid state circuits ♦ Satellite communication ♦ Gain ♦ Current measurement
Abstract In this paper, we report state of the art CW power results of 0.25-/spl mu/m gate length AlGaN/GaN HEMTs at both 30 and 35 GHz. At a drain bias of 30V, the 200/spl mu/m gate width devices showed a record power density of 4.13 W/mm with 23% of power added efficiency (PAE) and 5.5 dB of associated gain at 35 GHz, which represent the best power density and efficiency achieved by a solid-state devices at this frequency.
Description Author affiliation: TriQuint Semicond. Texas, Richardson, TX, USA (Lee, C.)
ISBN 0780377273
Educational Role Student ♦ Teacher
Age Range above 22 year
Educational Use Research ♦ Reading
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2003-06-23
Publisher Place USA
Rights Holder Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Size (in Bytes) 160.41 kB
Page Count 2
Starting Page 17
Ending Page 18


Source: IEEE Xplore Digital Library