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Author Flores, D. ♦ Jorda, X. ♦ Vellvehi, M. ♦ Fernandez, J. ♦ Hidalgo, S. ♦ Rebollo, J. ♦ Millan, J.
Source IEEE Xplore Digital Library
Content type Text
Publisher Institute of Electrical and Electronics Engineers, Inc. (IEEE)
File Format PDF
Copyright Year ©1996
Language English
Subject Domain (in DDC) Technology ♦ Engineering & allied operations ♦ Applied physics
Subject Keyword Anodes ♦ Thyristors ♦ MOSFET circuits ♦ Breakdown voltage ♦ Substrates ♦ Bipolar transistors ♦ Charge carrier processes ♦ Electrodes ♦ Power MOSFET ♦ Fabrication
Abstract This paper analyzes the static and dynamic electrical characteristics of BRT devices fabricated on homogeneous wafers, including a shorted anode structure. The use of homogeneous substrates allows the implementation of a direct path between the N-drift region and the anode electrode. This allows a reduction of the transient losses and the turnoff time. The operation mode, the electrical characteristics and the switching behaviour of BRT devices with shorted have been analysed by means of 2D numerical simulations. The reduction of the transient losses has been corroborated experimentally by performing switching tests under resistive load.
Description Author affiliation: Centro Nacional de Microelectronica, Univ. Autonoma de Barcelona, Spain (Flores, D.)
ISBN 0780332237
Educational Role Student ♦ Teacher
Age Range above 22 year
Educational Use Research ♦ Reading
Education Level UG and PG
Learning Resource Type Article
Publisher Date 1996-10-12
Publisher Place Romania
Rights Holder Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Size (in Bytes) 474.88 kB
Page Count 4
Starting Page 519
Ending Page 522


Source: IEEE Xplore Digital Library