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Author Phankong, N. ♦ Yanagi, T. ♦ Hikihara, T.
Source IEEE Xplore Digital Library
Content type Text
Publisher Institute of Electrical and Electronics Engineers, Inc. (IEEE)
File Format PDF
Copyright Year ©2011
Language English
Subject Domain (in DDC) Natural sciences & mathematics ♦ Physics ♦ Electricity & electronics ♦ Technology ♦ Engineering & allied operations ♦ Applied physics
Subject Keyword Semiconductor device measurement ♦ MOSFET ♦ Power measurement ♦ Silicon carbide ♦ Power semiconductor device ♦ Device characterization ♦ Capacitance ♦ Silicon ♦ Power MOSFET ♦ Silicon Carbide (SiC) ♦ Modeling
Abstract Device parasitics or inherent elements in a power MOSFET limit and affect its switching behavior. Models for Si power MOSFET have already been obtained through the previous studies. Based on the model, an equivalent circuit for SiC power MOSFET is proposed with taking the physical structure into account and evaluating the inherent elements.
Description Author affiliation: KYOTO UNIVERSITY Dept. of Electrical Engineering, Katsura, Nishikyo, Kyoto, 615-8510, Japan (Yanagi, T.; Hikihara, T.) || RAJAMANGALA UNIVERSITY OF TECHNOLOGY THANYABURI, Dept. of Electrical Engineering, Klong 6, Thanyaburi, Pathumthani, 12110, Thailand (Phankong, N.)
ISBN 9781612841670
Educational Role Student ♦ Teacher
Age Range above 22 year
Educational Use Research ♦ Reading
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2011-08-30
Publisher Place United Kingdom
Rights Holder EPE ASSOCIATION
e-ISBN 9789075815146
Size (in Bytes) 651.47 kB
Page Count 8
Starting Page 1
Ending Page 8


Source: IEEE Xplore Digital Library