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Author Delaney, M.J. ♦ Chou, C.S. ♦ Larson, L.E. ♦ Jensen, J.F. ♦ Deakin, D.S. ♦ Brown, A.S. ♦ Hooper, W.W. ♦ Thompson, M.A. ♦ McCray, L.G. ♦ Rosenbaum, S.E.
Source IEEE Xplore Digital Library
Content type Text
Publisher Institute of Electrical and Electronics Engineers, Inc. (IEEE)
File Format PDF
Copyright Year ©1989
Language English
Subject Domain (in DDC) Natural sciences & mathematics ♦ Physics ♦ Electricity & electronics ♦ Technology ♦ Engineering & allied operations ♦ Applied physics
Abstract High-performance digital integrated circuits have been fabricated with low-temperature buffer GaAs MESFET technology. The materials structure eliminates side-gating and light sensitivity, and improves FET performance. Individual transistors with a 0.2-μm gate length have a transconductance $<e1>g</e1>_{m}$ of 600 mS/mm and an extrapolated cutoff frequency $<e1>f</e1>_{T}$ of 80 GHz. Static SCFL frequency dividers fabricated in this technology exhibit a maximum clock rate of 22 GHz
Educational Role Student ♦ Teacher
Age Range above 22 year
Educational Use Research ♦ Reading
Education Level UG and PG
Learning Resource Type Article
Publisher Date 1989-05-15
Publisher Place USA
Rights Holder Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Size (in Bytes) 307.75 kB


Source: IEEE Xplore Digital Library