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Author Arakawa, Y.
Source IEEE Xplore Digital Library
Content type Text
Publisher Institute of Electrical and Electronics Engineers, Inc. (IEEE)
File Format PDF
Copyright Year ©2004
Language English
Subject Domain (in DDC) Technology ♦ Engineering & allied operations ♦ Applied physics
Subject Keyword Quantum dots ♦ Nanoscale devices ♦ Quantum dot lasers ♦ III-V semiconductor materials ♦ Capacitive sensors ♦ Optical materials ♦ Size control ♦ Optical control ♦ Laser applications ♦ Quantum well lasers
Abstract Summary form only given. The use of strain to produce self-organized quantum dots has now become a well-accepted approach and is widely used in III-V semiconductors and other material systems. Much progress has been made in the area of growth - where the focus has been on size control, and optical characterization, where the goal has been the application to lasers and detectors. This paper describes the growth and optical properties of (in,Ga)As/(Ga,AI)As and InGaN/GaN quantum dots, and their application to nanophotonic devices.
Description Author affiliation: Res. Center for Adv. Sci. & Technol., Univ. of Tokyo, Japan (Arakawa, Y.)
ISBN 0780382846
ISSN 15483770
Educational Role Student ♦ Teacher
Age Range above 22 year
Educational Use Research ♦ Reading
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2004-06-21
Publisher Place USA
Rights Holder Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Size (in Bytes) 34.35 kB

Source: IEEE Xplore Digital Library