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Author Cheon Bae Kim ♦ Kim, S.G. ♦ Cho, S.I. ♦ Kim, K.S. ♦ Lee, K.P. ♦ Yong Han Roh
Source IEEE Xplore Digital Library
Content type Text
Publisher Institute of Electrical and Electronics Engineers, Inc. (IEEE)
File Format PDF
Copyright Year ©2009
Language English
Subject Domain (in DDC) Natural sciences & mathematics ♦ Physics ♦ Electricity & electronics ♦ Technology ♦ Engineering & allied operations ♦ Applied physics
Subject Keyword Capacitors ♦ Random access memory ♦ Capacitance ♦ Lithography ♦ Scanning electron microscopy ♦ Shape ♦ Supercapacitors ♦ Leakage current ♦ Electric variables ♦ Material storage
Abstract In order to achieve dynamic random access memory (DRAM) with high density and high performance, abrupt scaling down of memory device is necessary. But lithography tool cannot follow up memory device scaling down. Double patterning technology (DPT) has been reported as a promising candidate to extend lithography limit [1, 2]. But DPT has a technical problem of pattern to pattern overlay [3]. To overcome overlay problems, cross double patterning technology (cross DPT) in which second pattern is perpendicular to first one is introduced. In this paper, for the first time, memory cell capacitor using cross DPT is successfully developed. Process integration and electrical characteristics of memory cell capacitor using cross DPT is presented.
Description Author affiliation: TD Team, Semiconductor Business, Samsung Electronics, Korea (Kim, S.G.) || School of Information and Communication Engineering, Sungkyunkwan University, Korea (Cheon Bae Kim; Yong Han Roh) || Fab Team, Semiconductor Business, Samsung Electronics, Korea (Kim, K.S.) || YE Team, Semiconductor Business, Samsung Electronics, Korea (Lee, K.P.) || Process Development Team, Semiconductor Business, Samsung Electronics, Korea (Cho, S.I.)
ISBN 9781424460304
Educational Role Student ♦ Teacher
Age Range above 22 year
Educational Use Research ♦ Reading
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2009-12-09
Publisher Place USA
Rights Holder Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Size (in Bytes) 370.87 kB
Page Count 2
Starting Page 1
Ending Page 2


Source: IEEE Xplore Digital Library