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Author Schmidt, R. ♦ Scheuermann, U.
Source IEEE Xplore Digital Library
Content type Text
Publisher Institute of Electrical and Electronics Engineers, Inc. (IEEE)
File Format PDF
Copyright Year ©2009
Language English
Subject Domain (in DDC) Natural sciences & mathematics ♦ Physics ♦ Electricity & electronics ♦ Technology ♦ Engineering & allied operations ♦ Applied physics
Subject Keyword Insulated gate bipolar transistors ♦ Performance evaluation ♦ Measurement ♦ Temperature distribution ♦ Area measurement ♦ Temperature sensors ♦ Semiconductor device measurement ♦ IGBT ♦ Current measurement ♦ Simulation ♦ Electric variables measurement ♦ Thermal design ♦ Current distribution ♦ Current density ♦ Sensor
Abstract During operation steep lateral temperature gradients evolve in IGBT power semiconductor chips. The influence of these lateral gradients on the measurement of the virtual junction temperature by means of the widely used VCE(T)-method was investigated. In particular we address the question, how the obtained single temperature value is connected to the temperature distribution of the chip. A combination of electrical and thermal measurements together with thermal simulations was performed to understand the implicit averaging mechanisms of the VCE(T)-measurement. It is found that the lateral temperature gradient in the chip results in an inhomogeneous sense current distribution during the measurement. This current distribution is responsible for the formation of the measurement value and its corresponding temperature T∗. A comparison of experimental and simulation results shows that for currently existing IGBTs, T∗ corresponds to the area-weighted average of the chip's active area. The maximum imbalance in sense current density during the VCE(T)-measurement was determined to be 150% and 50% of the average current density for the central and the corner parts of the chip, respectively. Furthermore, the temporal evolution of the temperature profile and its influence on the thermal impedance measurement are discussed. It is shown that the temperature at the chip center evolves with a smaller thermal time constant (i.e. faster evolution) than at the chip corners.
Description Author affiliation: SEMIKRON Elektronik GmbH, Sigmundstraße 200, Nuremberg, Germany (Schmidt, R.; Scheuermann, U.)
ISBN 9781424444328
Educational Role Student ♦ Teacher
Age Range above 22 year
Educational Use Research ♦ Reading
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2009-09-08
Publisher Place Spain
Size (in Bytes) 363.65 kB
Page Count 9
Starting Page 1
Ending Page 9

Source: IEEE Xplore Digital Library