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Author Sahu, T. ♦ Palo, S. ♦ Sahoo, N.
Source IEEE Xplore Digital Library
Content type Text
Publisher Institute of Electrical and Electronics Engineers, Inc. (IEEE)
File Format PDF
Copyright Year ©2012
Language English
Subject Domain (in DDC) Natural sciences & mathematics ♦ Physics ♦ Electricity & electronics ♦ Technology ♦ Engineering & allied operations ♦ Applied physics
Subject Keyword Scattering ♦ Electric fields ♦ Gallium arsenide ♦ Doping ♦ Electric potential ♦ Electron mobility ♦ Energy states
Abstract We study the effect of external electric field F in enhancing the multisubband electron mobility mediated by intersubband effects in a pseudomorphic GaAs / InAs coupled double quantum well structure. An electric field F changes the potential profile of the structure which in turn amends the subband energy levels and wave functions. By varying F, the occupation of different subbands can be changed. As a result the system can be transformed from double subband occupancy to single subband occupancy resulting enhancement in the mobility due to the suppression of intersubband interaction. We show that the effect of the doping concentration and hence the 2D-electron density on the electric field dependence of the subband mobility yields interesting results.
Description Author affiliation: Department of Electronic Science, Berhampur University, Berhampur-760007, India (Sahoo, N.) || National Institute of Science and Technology, Berhampur-761008, Odisha, India (Sahu, T.) || Department of ECE, Kalam Institute of Technology, Berhampur, India (Palo, S.)
ISBN 9781467323956
Educational Role Student ♦ Teacher
Age Range above 22 year
Educational Use Research ♦ Reading
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2012-09-19
Publisher Place Malaysia
Rights Holder Institute of Electrical and Electronics Engineers, Inc. (IEEE)
e-ISBN 9781467323963
Size (in Bytes) 1.31 MB
Page Count 5
Starting Page 47
Ending Page 51

Source: IEEE Xplore Digital Library