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Author Hudeish, A.Y. ♦ Abdul Aziz, A. ♦ Hassan, Z. ♦ Ibrahim, K.
Source IEEE Xplore Digital Library
Content type Text
Publisher Institute of Electrical and Electronics Engineers, Inc. (IEEE)
File Format PDF
Copyright Year ©2004
Language English
Subject Domain (in DDC) Natural sciences & mathematics ♦ Physics ♦ Electricity & electronics ♦ Technology ♦ Engineering & allied operations ♦ Applied physics
Subject Keyword Hydrogen ♦ Schottky diodes ♦ Gallium nitride ♦ Temperature sensors ♦ Temperature distribution ♦ Sensor phenomena and characterization ♦ Sputtering ♦ Gas detectors ♦ Testing ♦ Voltage
Abstract Pt/GaN devices operated as Schottky diodes were characterized for their hydrogen gas sensitivity. The sensors are tested at different concentrations of hydrogen gas as a function of operating temperature. The Pt thin film (100nm) was prepared and deposited by sputtering method. The electrical characterization was made using (I-V) current voltage of the temperatures range of 25 C to 500 C. Result shows the current output increased as operating temperature increases and decreased as temperature exceed 200 C. The maximum sensor sensitivity recorded in terms of current detected showed higher value than those obtained form Pt/Si and Pt/SiC sensor diode at similar temperature. Sensitivity also increases as the concentration of H/sub 2/ gas increased. Further more, the sensor shows remarkable sensitivity stability and retained it at broad temperature range of 25 C up to 200 C.
Description Author affiliation: Sch. of Phys., Univ. Sains Malaysia, Penang, Malaysia (Hudeish, A.Y.; Abdul Aziz, A.; Hassan, Z.; Ibrahim, K.)
ISBN 0780386582
Educational Role Student ♦ Teacher
Age Range above 22 year
Educational Use Research ♦ Reading
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2004-12-07
Publisher Place Malaysia
Rights Holder Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Size (in Bytes) 1.24 MB


Source: IEEE Xplore Digital Library