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Author Dandin, M. ♦ Nelson, N. ♦ Saveliev, V. ♦ Honghao Ji ♦ Abshire, P. ♦ Weinberg, I.
Source IEEE Xplore Digital Library
Content type Text
Publisher Institute of Electrical and Electronics Engineers, Inc. (IEEE)
File Format PDF
Copyright Year ©2007
Language English
Subject Domain (in DDC) Technology ♦ Engineering & allied operations ♦ Applied physics
Subject Keyword Detectors ♦ Diodes ♦ Electric breakdown ♦ Breakdown voltage ♦ CMOS process ♦ Photonics ♦ CMOS technology ♦ Circuits ♦ Costs ♦ Photomultipliers
Abstract We report an improved design and successful demonstration of single photon avalanche diode (SPAD) detectors fabricated in a standard nwell 0.5 mum CMOS technology. The detectors are implemented as circular junctions between p+ and nwell regions. Two techniques are used to suppress perimeter breakdown: guard rings at the edges of the junctions, formed using lateral diffusion of adjacent nwell regions, and a poly-silicon control gate over the diffused guard rings and surrounding regions. The detectors exhibit a breakdown voltage of -16.85 V, ~4 V higher than simple diode structures in the same technology. The detector exhibits a thermal event rate of 16000 counts/s at room temperature at an excess bias voltage of 1.15 V.
Description Author affiliation: Univ. of Maryland, College Park (Dandin, M.; Nelson, N.; Saveliev, V.; Honghao Ji; Abshire, P.)
ISBN 9781424412617
ISSN 19300395
Educational Role Student ♦ Teacher
Age Range above 22 year
Educational Use Research ♦ Reading
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2007-10-28
Publisher Place USA
Rights Holder Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Size (in Bytes) 389.66 kB
Page Count 4
Starting Page 585
Ending Page 588

Source: IEEE Xplore Digital Library