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Author Paramanik, D. ♦ Aluri, G. ♦ Krylyuk, S. ♦ Motayed, A. ♦ King, M. ♦ McLaughlin, S. ♦ Gupta, S. ♦ Cramer, H. ♦ Davydov, A.V. ♦ Nikoobakht, B.
Source IEEE Xplore Digital Library
Content type Text
Publisher Institute of Electrical and Electronics Engineers, Inc. (IEEE)
File Format PDF
Copyright Year ©2011
Language English
Subject Domain (in DDC) Natural sciences & mathematics ♦ Physics ♦ Electricity & electronics ♦ Technology ♦ Engineering & allied operations ♦ Applied physics
Subject Keyword Gallium nitride ♦ Iterative closest point algorithm ♦ Etching ♦ Radio frequency ♦ Educational institutions ♦ Nanostructures ♦ Films
Abstract Vertically aligned core-shell p-n nanostructures are technologically significant due to their potential applications in a variety of devices such as light-emitting diodes, laser diodes, photodetectors, and solar cells. Such structures developed in III-Nitride material system are expected to increase device efficiency, partially due to mitigating detrimental effects of spontaneous electrical polarization. Despite significant progress in the synthesis of nitride core-sell nanostructures using both bottom-up and top-down paradigms, fabrication of large arrays of these nanostructures with controlled morphology, orientation, dopant incorporation, and site-specific nucleation is still a challenge. One of the most challenging aspects of making high quality GaN nanopillar arrays using top-down approach is to design an etching protocol for producing high-aspect ratio structures while inducing minimal damage to the sidewalls and preventing the etch-mask erosion.[1]
Description Author affiliation: Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA (Paramanik, D.; Aluri, G.; Krylyuk, S.; Motayed, A.; Davydov, A.V.; Nikoobakht, B.) || Northrop Grumman ES, Linthicum, MD 21090 (King, M.; McLaughlin, S.; Gupta, S.; Cramer, H.)
ISBN 9781457717550
Educational Role Student ♦ Teacher
Age Range above 22 year
Educational Use Research ♦ Reading
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2011-12-07
Publisher Place USA
Rights Holder Institute of Electrical and Electronics Engineers, Inc. (IEEE)
e-ISBN 9781457717567
Size (in Bytes) 747.47 kB
Page Count 2
Starting Page 1
Ending Page 2

Source: IEEE Xplore Digital Library