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Author Chungpin Liao ♦ Duh, T.S. ♦ Yang, T.N. ♦ Lan, S.M. ♦ Liu, C.W. ♦ Yang, T.T. ♦ Hsu, J.S. ♦ Shao, H.Y.
Sponsorship Taiwan Semiconductor Ind. Assoc. ♦ IEEE Electron Devices Soc. Taipei Chapter
Source IEEE Xplore Digital Library
Content type Text
Publisher Institute of Electrical and Electronics Engineers, Inc. (IEEE)
File Format PDF
Copyright Year ©2004
Language English
Subject Domain (in DDC) Technology ♦ Engineering & allied operations ♦ Applied physics
Subject Keyword Integrated circuit modeling ♦ Isolation technology ♦ Substrates ♦ Silicon ♦ Materials science and technology ♦ Semiconductor device modeling ♦ Protons ♦ Very large scale integration ♦ Particle beams ♦ Integrated circuit packaging
Abstract A /spl pi/ technology (= particle-enhanced isolation) was proposed to employ energetic proton beams on the already-manufactured mixed-mode IC wafers (prior to packaging) for the suppression of undesirable substrate coupling (C. P. Liao et al., April 4, 2000). However, up to this day the physics behind this proton-caused defect phase is never clear. An effective 1-level defect model is constructed using experimental results and existing single-trap-level theory (Moll J. L. 1964) and TRIM (or SRIM) (http://www.srim.org/) code-simulated parameters. The found effective single trap level (E/spl tau/) is at about +0.24 eV in n-Si and at -0.34 eV in p-Si, measuring from the center of the energy band-gap.
Description Author affiliation: Graduate Inst. of Electro-Opt. & Mater. Sci., Nat. Huwei Univ. of Sci. & Technol., Yunlin, Taiwan (Chungpin Liao)
ISBN 0780384695
Educational Role Student ♦ Teacher
Age Range above 22 year
Educational Use Research ♦ Reading
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2004-09-09
Publisher Place Taiwan
Rights Holder Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Size (in Bytes) 286.79 kB
Page Count 4
Starting Page 166
Ending Page 169


Source: IEEE Xplore Digital Library