Access Restriction

Author Dragoi, V. ♦ Alexe, M. ♦ Reiche, M. ♦ Gosele, U.
Source IEEE Xplore Digital Library
Content type Text
Publisher Institute of Electrical and Electronics Engineers, Inc. (IEEE)
File Format PDF
Copyright Year ©1990
Language English
Subject Domain (in DDC) Technology ♦ Engineering & allied operations ♦ Applied physics
Subject Keyword Temperature ♦ Wafer bonding ♦ Silicon ♦ Glass ♦ Annealing ♦ Thermal stresses ♦ Semiconductor materials ♦ Elementary particle vacuum ♦ Bonding processes ♦ Thermal decomposition
Abstract Low temperature wafer bonding is desirable to bond processed wafers or dissimilar materials. The present paper proposes a low temperature silicon-to-silicon bonding process using a spin-on glass as intermediate layer. The interface bonding energy after annealing at 200/spl deg/C is about 2.3 J/m/sup 2/ and proved to be sufficient to allow further mechanical processing.
Description Author affiliation: Max Planck of Microstruct. Phys., Halle, Germany (Dragoi, V.)
ISBN 0780351398
Educational Role Student ♦ Teacher
Age Range above 22 year
Educational Use Research ♦ Reading
Education Level UG and PG
Learning Resource Type Article
Publisher Date 1999-10-05
Publisher Place Romania
Rights Holder Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Size (in Bytes) 540.76 kB
Page Count 4
Starting Page 443
Ending Page 446

Source: IEEE Xplore Digital Library