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Author Sargentisa, C. ♦ Giannakopoulos, K. ♦ Travlos, A. ♦ Tsamakis, D.
Source IEEE Xplore Digital Library
Content type Text
Publisher Institute of Electrical and Electronics Engineers, Inc. (IEEE)
File Format PDF
Copyright Year ©2007
Language English
Subject Domain (in DDC) Natural sciences & mathematics ♦ Physics ♦ Electricity & electronics ♦ Technology ♦ Engineering & allied operations ♦ Applied physics
Subject Keyword Platinum ♦ Gold ♦ Nanoparticles ♦ Hafnium oxide ♦ Electric variables ♦ Dielectrics ♦ Tunneling ♦ Thickness control ♦ Temperature ♦ Annealing
Abstract In this work, electrical characteristics of two types MOS memory structures: one that contains platinum and one that contains gold nanoparticles, embedded between two dielectric layers, a thin "tunneling" $SiO_{2}$ and a thicker $HfO_{2}$ "control" layer has been compared. The nanoparticles are formed during simple electron-gun deposition of a very small quantity of platinum or gold, at room temperature, on 3.5 nm of $SiO_{2},$ which was thermally grown on a Si wafer. The nanoparticles are formed without any annealing. Then, they are capped with a $HfO_{2}$ layer.
Description Author affiliation: Nat. Tech. Univ. of Athens, Athens (Sargentisa, C.)
ISBN 9781424418916
Educational Role Student ♦ Teacher
Age Range above 22 year
Educational Use Research ♦ Reading
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2007-12-12
Publisher Place USA
Rights Holder Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Size (in Bytes) 429.74 kB
Page Count 2
Starting Page 1
Ending Page 2


Source: IEEE Xplore Digital Library